Injection of low-energy SiCH₅⁺ ion-beam to Si substrate during chemical vapor deposition process using methylsilane

Silicon carbide (SiC) films produced on Si substrates by the thermal chemical vapor deposition (CVD) method using methylsilane (MS) were compared with those made mass-selected ion-beam (MSIBD) MS-derived 100 eV SiCH 5 + ions. We also investigated effect of ion injections during CVD process. When substrate was 550 °C, no distinct peaks found in Fourier transform infrared (FTIR) spectroscopy spectra samples obtained both and MSIBD. By contrast, an obvious FTIR peak due to presence SiC observed when ions injected a conjunction MS. In case 650 we that film thickness significantly increased additional process These results suggest interaction between MS has some effects formation at temperatures °C. temperature set 750 injection negligibly small CVD.